Donor‐acceptor pair scattering in compensated semiconductors

摘要: The drift and Hall mobilities have been calculated for the scattering of electrons from donor‐acceptor pairs in a nondegenerate semiconductor. separation between donor acceptor has correlated via nearest‐neighbor distribution function impurity potentials modeled as screened coulomb interactions. By utilizing Alfred’s [Phys. Status Solidi B 82, 467 (1977)] temperature‐dependent dielectric function, mobility high‐ low‐temperature regimes is obtained compared with dipole approximation pair Born approximation. random exceeds by orders magnitude moderate dopant levels of, e.g., order 1016 cm−3, temperatures greater than 30 °K, indicating that may be inadequate most applications interest.