Understanding scanned probe oxidation of silicon

摘要: A model for scanned probe microscope (SPM) silicon oxidation is presented. The was derived from a consideration of the space-charge dependence this solid-state reaction as function substrate doping type/level and has been verified experimentally by integrating an in situ electrical force characterization technique, scanning Maxwell stress microscopy (SMM), into SPM fabrication process. This system enables us to obtain topographic, SMM capacitance, surface potential information nanometer-scale oxide features ionic concentrations within growing film. properties are compared those anodic thermal oxides. predictive power resulting demonstrated showing how growth rate character SPM-oxide can be altered dramatically modulating applied voltage.