Evaluation of scanning Maxwell-stress microscopy for SPM-based nanoelectronics
作者： J A Dagata
DOI: 10.1088/0957-4484/8/3A/002
关键词:
摘要: A preliminary evaluation of the compatibility, spatial resolution, and sensitivity scanning Maxwell-stress microscopy (SMM) as an in situ diagnostic technique for SPM oxidation silicon is presented. These results indicate that SMM will provide us with a more detailed understanding reaction mechanism which occurs at tip - sample junction during oxidation. also appears to be promising simultaneously investigating dimensional electrical properties molecular distributions within highly complex micro-environments such phase-separated polymer systems. This effort integrate SPM-based fabrication diagnostics discussed terms development predictive physical models optimization process possible choices future nanodevices.
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