作者: H.O. Jacobs , H.F. Knapp , S. Müller , A. Stemmer
DOI: 10.1016/S0304-3991(97)00027-2
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摘要: Abstract Electric potential measurements on different metals and semiconductors have been performed using a scanning probe microscope. The measured shows clear chemical contrast in all cases, allowing us to differentiate between materials down 100 nm size with noise smaller than 1 mV. lateral resolution as function of the tip-sample distance has numerical calculations force density acting tip are presented along theoretical examinations quantitative resolution.