The Effect of Depletion Layer Thickness in Avalanche Photodiodes for Measurement of Low-energy Electrons
作者： K. Ogasawara , T. Takashima , K. Asamura , Y. Saito , T. Mukai
DOI: 10.1016/J.NIMA.2006.08.001
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摘要: Abstract We have tested APDs (Type spl 3989 and Z7966, Hamamatsu Photonics K.K.) using an electron beam. The which has a depletion layer of 10 μ m , is firstly focused on in our former paper [K. Ogasawara, K. Asamura, T. Mukai, Y. Saito, Nucl. Instr. Meth. A 545(3) (2005) 744] for the energy range 5–20 keV. result shows that pulse height distribution APD signal exhibits significant peak electrons with energies above 8 keV, positions their peaks show good linearity. condition production at below 8 keV was attributed to thickness dead surface APDs. Now we tuned up acceleration system 40 keV, Z7966 by higher energies. output distributions this were distorted over 30 keV. In order examine distortion distributions, made Monte Carlo numerical simulation particle transport inside APD. highest limit expected be determined Therefore, tried type 3989, thicker ( 30 ) thinner layer. As expected, responded 2–40 keV fine distributions. resolution lower than 1 keV 2–20 keV electrons, 5 keV 40 keV electrons. linearity response also good. According simulation, about 60 keV are well detectable.
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