Semiconductor integrated circuit having discrete trap type memory cells

摘要: A multi-storage nonvolatile memory of high density, speed and reliability has a transistor switch transistors disposed on both the sides transistor. The includes gate insulating film having discrete traps electrode, whereas include electrodes. for storing information charge, can locally inject carriers, one cell constitutes at least 2 bits. electrodes realize source side injection. is fommed together with in self-aligned diffusion. electrode connected to word line so as perform word-line erase.