Multi-layer spacer technology for flash EEPROM
作者： Hui-Chen Chu , Wen-Cheng Chien
DOI:
关键词: Composite number 、 Memory cell 、 Multi layer 、 Layer (electronics) 、 Flash (photography) 、 Engineering 、 Optoelectronics 、 Nitride 、 EEPROM 、 Electronic engineering
摘要: A method is provided for forming multi-layer spacer (MLS) flash EEPROM devices. composite tetraethyl orthosilicate-silicon nitride (TEOS/Si3N4) layer deposited over the floating gate and anisotropically etched to form MLS. The resulting MLS better controlled dimensionally with attendant advantage, therefore, of definition channel lengths in memory cell more predictable programming erase performance EEPROMs.
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