Characterisation of Ti1−xSixNy nanocomposite films

摘要: Abstract Ti 1− x Si N y films were synthesised by RF reactive sputtering from and elemental targets, in an Ar/N 2 gas mixture. XRD results revealed the development of a two-phase system, composed nanocrystalline f.c.c. TiN (phase 1: B1 NaCl type) second one 2), where atoms replaced some ones, inducing structure that we may call solid solution. An amorphous phase, supposed to be silicon nitride, within grain boundaries seems also present, especially for high contents. TEM experiments confirmed f.c.c.-type phase 2, which is only develops without ion bombardment. The higher lattice parameter 1 (∼0.429 nm compared 0.424 bulk TiN) explained residual stress effect on peak position. replacement would explain low value (∼0.418 nm). All samples showed good hardness (Hv≥30 GPa), 0.85 0.15 1.03 at deposition temperature 300°C approximately 47 Gpa, double pure TiN. For temperatures, increase observed, as demonstrated this same sample, 400°C reveals 54 GPa. Similar behaviour was observed adhesion, sample critical load adhesive failure 90 N. In terms oxidation resistance, significant has been comparison with At 600°C, resistance 0.70 0.30 1.10 already 100 times than temperatures tends even better when other nitrides.