Graphene gate electrode for MOS structure-based electronic devices.
作者： Jong Kyung Park , Seung Min Song , Jeong Hun Mun , Byung Jin Cho
DOI: 10.1021/NL202983X
关键词:
摘要: We demonstrate that the use of a monolayer graphene as a gate electrode on top of a high-κ gate dielectric eliminates mechanical-stress-induced-gate dielectric degradation, resulting …
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