Work function tuning and improved gate dielectric reliability with multilayer graphene as a gate electrode for metal oxide semiconductor field effect device applications
作者： Abhishek Misra , Mayur Waikar , Amit Gour , Hemen Kalita , Manali Khare
DOI: 10.1063/1.4726284
关键词:
摘要: Graphene with varying number of layers is explored as metal gate electrode in oxide semiconductor structure by inserting it between the dielectric (SiO2) and contact (TiN) results are compared TiN electrode. We demonstrate an effective work function tuning upto 0.5 eV graphene layers. Inclusion even 1-3 significantly improved reliability measured breakdown characteristics, charge to breakdown, interface state density. These improvements attributed impermeability for hence reduced metallic contamination dielectric.
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