作者: Sarath D. Gunapala , Sumith V. Bandara , Cory J. Hill , David Z. Ting , John K. Liu
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摘要: Epitaxially grown self-assembled InAs-InGaAs-GaAs quantum dots (QDs) are exploited for the development of large-format long-wavelength infrared focal plane arrays (FPAs). The dot-in-a-well (DWELL) structures were experimentally shown to absorb both 45deg and normal incident light, therefore, a reflection grating structure was used enhance efficiency. devices exhibit peak responsivity out 8.1 mum, with detectivity reaching ~1times1010 Jones at 77 K. fabricated into first 640times512 pixel QD photodetector imaging FPA, which has produced excellent imagery noise equivalent temperature difference 40 mK 60-K operating