作者: Hongyong Zhang , Naoto Kusumoto
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摘要: A preparing method of a semiconductor, particularly polycrystal semiconductor film which has good electrical property is disclosed. In order to obtain non-crystalline silicon containing lot combination hydrogen and silicon, forming process by low temperature gas phase chemical reaction, heat annealing produce dangling bonds so as draw out from said film, applying laser irradiation non-crystal having bond are conducted.