Method for forming a semiconductor

作者: Hongyong Zhang , Naoto Kusumoto

DOI:

关键词:

摘要: A preparing method of a semiconductor, particularly polycrystal semiconductor film which has good electrical property is disclosed. In order to obtain non-crystalline silicon containing lot combination hydrogen and silicon, forming process by low temperature gas phase chemical reaction, heat annealing produce dangling bonds so as draw out from said film, applying laser irradiation non-crystal having bond are conducted.

参考文章(103)
Tatsumi Hiramoto, Semiconductor annealing device ,(1983)
Masato Toshima, Vacuum chamber slit valve ,(1987)
Stanford R. Ovshinsky, Raphael Tsu, Jesus Hernandez, Denis Martin, Method of forming photovoltaic quality amorphous alloys by passivating defect states ,(1983)
Toshiaki Narusawa, Yoshimichi Katagiri, Yasuo Yamagishi, Norio Sawatari, Katsuji Ebisu, Electrophotographic flash fixation process employing toner having improved light absorption properties and toner therefor ,(1985)
Ronald R. Silverman, Howard H. Hansen, Jerome B. Lasky, Method of laser annealing of subsurface ion implanted regions ,(1981)
Harvey N. Rogers, James T. Hall, Photochemical process for substrate surface preparation ,(1984)
Yoshinori Ashida, Kenji Miyachi, Masato Koyama, Nobuhiro Fukuda, Semiconductor film and process for its production ,(1990)