Random access memory
作者： H Pao
DOI:
关键词:
摘要: A random access memory, suitable for monolithic integrated circuit fabrication, having the ability to simultaneously write therein binary data applied thereto and read therefrom previously written therein. Each bit of such stored by memory is in a storage cell, each cell independent addressing circuitry. Binary into selected ones plurality cells establishing relative voltage polarity. from sensing polarity established
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