Role of ion beam induced solid flow in surface patterning of Si (1 0 0) using Ar ion beam irradiation
作者： Tanuj Kumar , Ashish Kumar , NP Lalla , Sonu Hooda , Sunil Ojha
DOI: 10.1016/J.APSUSC.2013.06.124
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摘要: Abstract Variation in the thicknesses of amorphous layer during ripple evolution on Si surface by 50 keV Ar + ion bombardment has been studied as a function fluence. Atomic force microscopy demonstrates formation ripples with beam irradiation. Cross-sectional transmission electron (XTEM) study shows that microstructure consists thicker front slope, whereas comparatively thinner rear slope. This observation compared to their sides is quite common. However, fluence dependence thickness variation not reported so far. A detailed analysis stationary cross-sectional area incompressible solid flow plays dynamical role induced patterning surfaces. The also verified Micro-Raman investigations. Rutherford back scattering experiment was performed confirm argon (Ar) incorporation near region silicon samples.
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