A semiconductor substrate with a planar metal pattern and anodized insulating layers
作者： J Sandhu , J Reuter
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摘要: A silicon semiconductor substrate has on its planar surface a multilevel metal-insulator pattern that includes at least one layer comprising conducting metal and insulating material. The material is high purity, non-porous in-situ formed compound of the metal. by blanketing predefined, apertured, located with film, forming an oxidation resistant mask over film in which mirrors desired to-be-formed circuit anodizing exposed conductive oxidizing ambient, thereby converting portions to medium, leaving beneath separated and/or embedded within medium.
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