High density semiconductor structure and method of making the same
作者： Arnold Reisman , Iwona Turlik
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摘要: A method of forming a high density semiconductor structure including one or more buried metal layers. One layers (30) may be formed on first substrate (10),with the layer being insulated from another and substrate. surface second which not The topmost layers, either both have an insulating thereon, are placed in contact heated oxidizing ambient atmosphere to form bond therebetween. vias connect active devices substrates. power ground planes metallization patterns for device interconnection.
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