High density plasma CVD reactor with combined inductive and capacitive coupling

摘要: The invention is embodied in a plasma reactor having vacuum chamber with cylindrical side portion and ceiling at certain height above the top of portion, wafer-holding pedestal near bottom chamber, gas injection ports pump, including generally planar disk-shaped conductive electrode adjacent ceiling, helical coil antenna winding corresponding to second diameter electrode, substantially spanning between switch for individually connecting each one antenna, wafer (a) respective RF power source or (b) ground (c) floating potential (i.e., unconnected any source). also coplanar base coinciding circumference source, potential. In embodiment, chemical vapor deposition reactor.