Influence of laser pulse frequency on the microstructure of aluminum nitride thin films synthesized by pulsed laser deposition
作者： K. Antonova , L. Duta , A. Szekeres , G.E. Stan , I.N. Mihailescu
DOI: 10.1016/J.APSUSC.2016.10.114
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摘要: Abstract Aluminum Nitride (AlN) thin films were synthesized on Si (100) wafers at 450° C by pulsed laser deposition. A polycrystalline AlN target was multipulsed irradiated in a nitrogen ambient, at different laser pulse repetition rate. Grazing Incidence X-Ray Diffraction and Atomic Force Microscopy analyses evidenced nanocrystallites with a hexagonal lattice in the amorphous AlN matrix. The thickness and optical constants of the layers were determined by infrared spectroscopic ellipsometry. The optical properties were studied by Fourier …
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