Epitaxial lateral overgrowth of InP on Si from nano-openings: Theoretical and experimental indication for defect filtering throughout the grown layer
作者： F. Olsson , M. Xie , S. Lourdudoss , I. Prieto , P. A. Postigo
DOI: 10.1063/1.2977754
关键词:
摘要: We present a model for the filtration of dislocations inside seed window in epitaxial lateral overgrowth (ELO). found that, when additive effects image and gliding forces exceed d ...
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