DRAM having a large dielectric breakdown voltage between an adjacent conductive layer and a capacitor electrode and method of manufacture thereof

摘要: An upper electrode of a capacitor is structured to have its end surface recessed from an interlayer insulating layer covering said layer, at position where the faces bit line contact portion. The and first are patterned same shape. Subsequently, only side etched recedes by isotropic etching. receding covered with sidewall layer. portion or pad for formed along thick amount Thus, distance between increased, therefore dielectric breakdown voltage therebetween also increased.