Plasma chemical vapor deposition of TiN
作者： Shizhi Li , Wu Huang , Hongshun Yang , Zhongshu Wang
DOI: 10.1007/BF00566838
关键词:
摘要: Experiments indicate that the temperature in chemical vapor deposition (CVD) of TiN can be decreased from about 1000°C conventional CVD to 500°C by application a D.C. nonequilibrium plasma. The hardness film is greater than 2000 kg/mm2 (Vickers). effect pressure, ratio gas mixture, and discharge parameters on rate, its hardness, microstructures has been studied.
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