TiN film formation by plasma chemical vapor deposition and its plasma diagnostics
作者： Y. Ishii , H. Ohtsu , T. Adachi , H. Ichimura , K. Kobayashi
DOI: 10.1016/0257-8972(91)90069-9
关键词:
摘要: Abstract TiN films were deposited by plasma chemical vapor deposition utilizing d.c. glow discharge onto metal substrates at 800 K from both gas mixtures of TiCl 4 -H 2 -N and -NH 3 . Plasma diagnostic measurements carried out using optical emission spectroscopy quadrupole mass spectrometry. The dependence film properties the species on power input was investigated. fine found to form low inputs with a higher rate in than difference between reactivity N that NH examined reactive believed play important roles formation reaction chain identified.
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