A comparative study of SIMS depth profiling of boron in silicon
作者： J. B. Clegg , A. E. Morgan , H. A. M. de Grefte , F. Simondet , A. Huber
关键词:
摘要: Details are given of a round robin depth profile comparison between 9 SIMS instruments (6 instrument types) applied to the analysis an ion implanted Si(B) sample. It is shown that shape boron not sensitive sputter conditions employed and width data shows agreement within 10% over concentration range ∼1021 1015 cm−3 (104 0.02 ppma). This level encouraging gives confidence in reliability method. Instrumental factors which control dynamic be dependent on system configuration. With quadrupole-based raster scanning quality primary beam importance, while with imaging microscope systems, memory effects significant. A ∼5 × 105 obtained from both types instrument. The identical samples prepared by implantation should enable other workers check instrumental performance.
sci-hub.se 参考文章(15)
J. J. Le Goux, H. N. Migeon, Principles and Applications of a Dual Primary Ion Source and Mass Filter for an Ion Microanalyser Secondary Ion Mass Spectrometry SIMS III. pp. 52- 56 ,(1982) , 10.1007/978-3-642-88152-7_7
J.-M. Gourgout, Use of the IMS-3f High Mass Resolving Power Springer, Berlin, Heidelberg. pp. 286- 290 ,(1979) , 10.1007/978-3-642-61871-0_85
T.M. Liu, W.G. Oldham, Channeling effect of low energy boron implant in IEEE Electron Device Letters. ,vol. 4, pp. 59- 62 ,(1983) , 10.1109/EDL.1983.25647
K. Wittmaack, M.G. Dowsett, J.B. Clegg, Improved secondary-ion extraction in a quadrupole-based ion microprobe International Journal of Mass Spectrometry and Ion Physics. ,vol. 43, pp. 31- 39 ,(1982) , 10.1016/0020-7381(82)80088-0
K. Wittmaack, Assessment of the extent of atomic mixing from sputtering experiments Journal of Applied Physics. ,vol. 53, pp. 4817- 4820 ,(1982) , 10.1063/1.331356
W. Reuter, K. Wittmaack, An AES-SIMS study of silicon oxidation induced by ion or electron bombardment Applications of Surface Science. ,vol. 5, pp. 221- 242 ,(1980) , 10.1016/0378-5963(80)90063-X
A.E. Morgan, H.A.M. de Grefte, N. Warmoltz, H.W. Werner, H.J. Tolle, The influence of bombardment conditions upon the sputtering and secondary ion yields of silicon Applications of Surface Science. ,vol. 7, pp. 372- 392 ,(1981) , 10.1016/0378-5963(81)90084-2
K. Wittmaack, Raster scanning depth profiling of layer structures Applied Physics. ,vol. 12, pp. 149- 156 ,(1977) , 10.1007/BF00896140
Charles W. Magee, William L. Harrington, Richard E. Honig, Secondary ion quadrupole mass spectrometer for depth profiling--design and performance evaluation. Review of Scientific Instruments. ,vol. 49, pp. 477- 485 ,(1978) , 10.1063/1.1135438
J. B. Clegg, D. J. O’Connor, Evaluation of secondary ion mass spectrometry profile distortions using Rutherford backscattering Applied Physics Letters. ,vol. 39, pp. 997- 999 ,(1981) , 10.1063/1.92640