Influence of γ-radiation doses on the properties of TeOx: (x=2-3) thin film
作者： Namrata Dewan , K. Sreenivas , Vinay Gupta
DOI: 10.1063/1.2769778
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摘要: The influence of γ-ray doses (10–50 Gy) on the optical and electrical properties radio-frequency sputtered tellurium dioxide (TeOx) thin film was studied. composition as-deposited TeOx films deposited under 25% oxygen 100% in sputtering gas mixture (Ar+O2) x=2 3, respectively. TeO3 were found to be highly sensitive γ-radiation value band gap decrease from 4.18 3.56 eV with increasing radiation dose 10 50 Gy. Current-voltage characteristics showed an increase conductivity doses. Monotonic values dielectric constant for observed. effect has been correlated rearrangement bipyramidal structure amorphous film.
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