Room temperature NO2 sensing properties of reactively sputtered TeO2 thin films
作者： T. Siciliano , M. Di Giulio , M. Tepore , E. Filippo , G. Micocci
DOI: 10.1016/J.SNB.2008.12.004
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摘要: Abstract Tellurium oxide (TeO2) thin films were deposited on quartz substrates by sputtering a Te metal target in an Ar + O2 gas mixture. The structure and phase identification of the samples investigated X-ray diffraction (XRD) Raman spectroscopy. as-deposited amorphous became crystalline after thermal annealing at 500 °C. optical energy gap was determined from transmittance reflectance spectra. direct values found to be 3.81 eV 3.73 eV thermally annealed samples. Properties TeO2 for NO2 sensing room temperature also investigated. showed negligible sensitivity gas. On contrary prepared promising response towards tested
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