Flexible low voltage nonvolatile memory transistors with pentacene channel and ferroelectric polymer
作者： Kwang H. Lee , Gyubaek Lee , Kimoon Lee , Min Suk Oh , Seongil Im
DOI: 10.1063/1.3089379
关键词:
摘要: We report on the fabrication of pentacene-based nonvolatile memory thin-film transistors (NVM-TFTs) with thin poly(vinylidene fluoride/trifluoroethylene) ferroelectric gate insulators. Our NVM-TFT adopts flexible polyethersulfone substrate and operates under low voltage write-erase (WR-ER) pulses ±13∼±20 V field effect mobilities 0.1–0.18 cm2/V s, depending polymer thickness. displays good window (ΔV) 2.5–8 V also exhibits WR-ER current ratio 20–40. The retention properties persist over ∼10 000 s dynamic response for demonstrates clear distinction states short switching pulse 50 ms.
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