Theory of the Effect of Strain on GaAs Electroluminescent Diodes
作者： P. R. Emtage
DOI: 10.1063/1.1714319
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摘要: A simplified theory of the effect strain on acceptor states in GaAs is used to account for observations made electroluminescent diodes, optical transition being between conduction band and states. The are described as having a hydrogenic envelope k space, constituted primarily heavy mass band. calculated changes intensity line splitting fair agreement with experiment, but no explanation observed shift has yet been found.
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sci-hub.se 参考文章(4)
G. Dresselhaus, A. F. Kip, C. Kittel, Cyclotron Resonance of Electrons and Holes in Silicon and Germanium Crystals Physical Review. ,vol. 98, pp. 368- 384 ,(1955) , 10.1103/PHYSREV.98.368
Walter Kohn, Daniel Schechter, Theory of Acceptor Levels in Germanium Physical Review. ,vol. 99, pp. 1903- 1904 ,(1955) , 10.1103/PHYSREV.99.1903
M. D. Sturge, Optical Absorption of Gallium Arsenide Between 0.6 and 2.75 eV Physical Review. ,vol. 127, pp. 768- 773 ,(1962) , 10.1103/PHYSREV.127.768
H. Ehrenreich, A. W. Overhauser, Scattering of Holes by Phonons in Germanium Physical Review. ,vol. 104, pp. 331- 342 ,(1956) , 10.1103/PHYSREV.104.331