Dopant Enhanced Interconnect
作者： Rohan Akolkar , Tejaswi K. Indukuri , Sridhar Balakrishnan , James S. Clarke , Adrien R. Lavoie
DOI:
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摘要: Techniques are disclosed that enable an interconnect structure is resistance to electromigration. A liner deployed underneath a seed layer of the structure. The can be thin continuous and conformal layer, may also limit oxidation underlying barrier (or other surface). dopant compatible (non-alloying, non-reactive) with provided alloy allows for segregation at interface top layer. Thus, electromigration performance improved.
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