Method and apparatus for extending equipment uptime in ion implantation

摘要: The service lifetime of an ion source (400) is enhanced or prolonged by the having provisions for ire-situ etch cleaning and extraction electrode (405), using reactive halogen gases (F1, F2), features that extend duration between cleanings. latter include accurate vapor flow control, focusing beam optics, thermal control prevents formation deposits destruction. An apparatus comprised generating dopant ions semiconductor wafer processing coupled to a remote plasma which delivers F Cl first purpose in electrode. These methods enable long equipment uptime when running condensable feed such as sublimated sources, are particularly applicable use with so-called cold sources. Methods described decaborane octadecarborane used materials, well vaporized elemental arsenic phosphorus used, serve enhance stability during implantation.