A high quality ITO/PET electrode for flexible and transparent optoelectronic devices
作者： A. M. Bazargan , Farhad Sharif , S. Mazinani , N. Naderi
DOI: 10.1007/S10854-016-5881-7
关键词:
摘要: High quality indium tin oxide/polyethylene terephthalate (ITO/PET) electrode with sheet resistance as low 1.16 Ω/□ and the optical transmittance of 91 % at wavelength 600 nm was fabricated. The room-temperature radio frequency (RF) magnetron sputtering technique used to deposit ITO thin film on PET substrate under RF power without oxygen flow or post treatment. remarkable value 118.5 × 10−3 Ω−1 achieved for figure merit in 93 thick film, due fine tuning parameters. An entirely Ohmic behavior recorded ITO/PET copper contacts suggesting that product is highly capable application optoelectronic devices. results field emission scanning electron microscopy atomic force demonstrated consistency a desired surface morphology giving Rrms 2.073 nm. elemental, chemical phase analyses further revealed deposited pure amorphous.
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