Strain Effects on Electronic Bandstructures in Nanoscaled Silicon: From Bulk to Nanowire
作者： Tadashi Maegawa , Tsuneki Yamauchi , Takeshi Hara , Hideaki Tsuchiya , Matsuto Ogawa
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摘要: In this paper, we present a comparative computational study on strain effects in Si nanostructures including bulk, thin film, and nanowire configurations. We employed first principles calculation to identify the bandstructure parameters such as band splitting energy transport effective mass. As result, found that bulk film have similar under uniaxial lang110rang strain. Particularly, mass reduction of electrons due is expected even film. On other hand, structure with nanoscale cross section has lighter than structures, regardless amount
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