Drive current enhancement in p-type metal–oxide–semiconductor field-effect transistors under shear uniaxial stress
作者： L. Shifren , X. Wang , P. Matagne , B. Obradovic , C. Auth
DOI: 10.1063/1.1841452
关键词:
摘要: Recent attention has been given to metal–oxide–semiconductor field-effect transistor (MOSFET) device designs that utilize stress achieve performance gain in both n-type MOSFETs (NMOS) and p-type (PMOS). The physics behind NMOS is better understood than of PMOS gain, which received less attention. In this letter, we describe the warping phenomena responsible for seen [110] uniaxially stressed devices on [100] orientated wafers. We also demonstrate shear uniaxial suited MOSFET applications biaxial as it able maintain at high vertical lateral fields.
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