作者: J.F. Groves , Y. Du , I. Lyubinetsky , D.R. Baer
DOI: 10.1016/J.SPMI.2008.01.016
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摘要: Abstract A gallium focused ion beam has been used to create discrete pits on a SrTiO 3 (100) surface with the idea that these will serve as nucleation sites for subsequent Cu 2 O nanodot growth. The concentration of within analysed using high-resolution Auger system immediately after pit formation and also following wet chemical etching thermal annealing surface. geometry determined atomic force microscopy (AFM). Growth nanodots patterned surfaces performed different processing Ga dose conditions. is primary mode dot formation. In several samples, growth appears occur by two-step process filling before initiation second, distinct phase above plane original