Acceptor doping in ZnSe versus ZnTe

作者: David B. Laks , Chris G. Van de Walle , G. F. Neumark , Sokrates T. Pantelides

DOI: 10.1063/1.109681

关键词:

摘要: It is a long‐standing puzzle that ZnSe difficult to dope p type, while ZnTe—which very similar ZnSe—is easily doped type. We report ab initio calculations which show the solubilities of Li and Na acceptors are much greater in ZnTe than same ZnSe. trace origin this difference bonding properties with neighboring chalcogens. Our results also explain experimentally observed dependence on dopant concentration dislocation density p‐type epilayers grown GaAs.

参考文章(18)
D. J. Chadi, K. J. Chang, Self‐compensation through a large lattice relaxation inp‐type ZnSe Applied Physics Letters. ,vol. 55, pp. 575- 577 ,(1989) , 10.1063/1.101837
J. M. DePuydt, M. A. Haase, H. Cheng, J. E. Potts, Electrical characterization ofp‐type ZnSe Applied Physics Letters. ,vol. 55, pp. 1103- 1105 ,(1989) , 10.1063/1.101670
M. A. Haase, J. Qiu, J. M. DePuydt, H. Cheng, Blue-green laser diode Applied Physics Letters. ,vol. 59, pp. 1272- 1274 ,(1992) , 10.1063/1.105472
R.N. Bhargava, Materials growth and its impact on devices from wide band gap II–VI compounds Journal of Crystal Growth. ,vol. 86, pp. 873- 879 ,(1988) , 10.1016/0022-0248(90)90817-5
H. Tews, H. Venghaus, P. J. Dean, Excited states of shallow acceptors in ZnSe Physical Review B. ,vol. 19, pp. 5178- 5184 ,(1979) , 10.1103/PHYSREVB.19.5178
J.L. Pautrat, J.M. Francou, N. Magnea, E. Molva, K. Saminadayar, Donors and acceptors in tellurium compounds; The problem of doping and self-compensation Journal of Crystal Growth. ,vol. 72, pp. 194- 204 ,(1985) , 10.1016/0022-0248(85)90143-5
H. Venghaus, P. J. Dean, Shallow-acceptor, donor, free-exciton, and bound-exciton states in high-purity zinc telluride Physical Review B. ,vol. 21, pp. 1596- 1609 ,(1980) , 10.1103/PHYSREVB.21.1596