Photoreflectance spectroscopy of vertically coupled InGaAs/GaAs double quantum dots
作者： G Sęk , K Ryczko , J Misiewicz , M Bayer , F Klopf
DOI: 10.1016/S0038-1098(00)00490-7
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摘要: Abstract Photoreflectance and high excitation photoluminescence spectra have been measured at 10 K for In0.6Ga0.4As/GaAs double quantum dot structures with various thicknesses of the GaAs separating layer. Several transitions between split states, due to dot–dot wetting layer well–well interaction, observed. The identified using results effective mass approximation calculations wells lens-shaped dots. splitting energy has obtained as function barrier width.
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