作者: Kuan-Jen Chen , Fei-Yi Hung , Truan-Sheng Lui , Sheng-Po Chang , Wen-Lung Wang
DOI: 10.1016/J.APSUSC.2013.02.084
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摘要: Abstract This study presents a bias-crystallization mechanism (BCM) that is based on ZnO/In/ZnO tri-layer film and thermal annealing treatment ZnO/ITO/ZnO films. After biasing (40 V, 0.025 A), the resistivity of sample was reduced to 1.35 × 10 −2 Ω cm. Bias-induced Joule heat indium ion diffusion were critical factors with regard decreasing resistivity. When substituted for metal layer, ZnO/ITO (13 nm)/ZnO thin demonstrated comparatively better electrical properties optical transmittance. During annealing, tin atoms in ITO structure diffused into ZnO matrix improved conductivity film. Inter-metallic oxide (IMO) formed interface between interlayer, it dominated crystallization characteristics as well