The influences of plasma ion bombarded on crystallization, electrical and mechanical properties of Zn–In–Sn–O films
作者： K.J. Chen , F.Y. Hung , S.J. Chang , J.D. Liao , C.C. Weng
DOI: 10.1016/J.APSUSC.2011.09.056
关键词:
摘要: Abstract The quality of co-sputtering derived Zn–In–Sn–O (ZITO) film was adjusted by different gas (oxygen and argon) induced plasma ions bombarding (PIB) treatment. result showed that the conductivity could be improved after bombardment. increment oxygen vacancies bombard-induced thermal energy were main reasons. Notably, efficiency Ar bombarded for not only better but also had a smoother surface morphology. Due to will react with metal atoms form oxide possessed higher momentum. In addition, O-rich layer on ultra-surface removed enhanced reliability enhance performance optoelectronic devices.
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