Negative voltage generator for flash EPROM design
作者： Tien-Ler Lin , Liang No Chao
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摘要: A circuit is provided for supplying a negative high voltage to an integrated from positive source Vpp. The applied plurality of FLASH electrically erasable programmable read only memory (EPROM) cells. includes oscillator coupled converter which provides periodic signal. signal charge pump (3) including three P-channel type transistors produced the voltage. and drain first transistor (41) second transistor's (43) gate reference ground potential with gate. Finally, third outputs floating gates EPROM cells during erase operation. Further, generated relatively precise, so no regulation required.
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