Method for pattern formation
作者： Hiroyuki Hieda , Naoko Kihara
DOI:
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摘要: There is provided a method for pattern formation, including step of coating composition comprising block copolymer, silicon compound, and solvent dissolving these components onto an object to form layer the on object, subjecting self-organization copolymer cause phase separation into first phase, in which compound localized, having higher etching resistance by heat treatment or/and oxygen plasma treatment, second polymer lower thereby forming with fine pattern, using as mask thus formed layer.
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