Narrow-bandgap semiconductor-based thermal sensors
作者： Y. Azzouz , J.P. Cheron , A. Boyer , E. Cisse
DOI: 10.1016/0924-4247(91)87063-9
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摘要: Abstract The synthesis of bismuth telluride and antimony by the molecular beam method in an ultra-high vacuum is described. main thermoelectric properties two narrow-bandgap semiconductors are given we discuss applications involving measurement radiation powers hyper-frequency powers. sensitivity clearly much higher than with classical thermocouples such as [Bi/Sb] [Cu/constantan].
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sci-hub.se 参考文章(4)
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