Light emission and negative differential conductance of n-type nanoporous silicon with buried p-layer assistance
作者： Jia-Chuan Lin , Wei-Chih Tsai , Wei-Lun Chen
DOI: 10.1063/1.2709632
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摘要: The light-emission and current-voltage properties of n-type nanoporous silicon (n-NPS) with a hole assistance buried p layer are explored. influences anodic current density on the formation, morphology, n-NPS measured. Such films have nanoscaled pores high-aspect-ratio pillars. Since anisotype junction is forward biased during anodization process, many holes can drift straightupward from participate in electrochemical reaction. At room temperature, high peak-to-valley ratios about 117.3 be obtained negative difference conductance region as well strong visible light emissions clearly observed under ultraviolet excitation.
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