Luminescence behavior and compensation effect on the hole concentration in the sol-gel Zn1-xCuxSy films with different compositions
作者： Wei-Shih Ni , Yow-Jon Lin , Hsing-Cheng Chang , Chia-Jyi Liu , Liang-Ru Chen
DOI: 10.1016/J.JLUMIN.2015.08.021
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摘要: Abstract This study determines the effect of Cu and S content on structural, luminescence electrical properties sol–gel Zn1−xCuxSy films. The dependence acceptors [interstitial sulfur (Si)] donors [sulfur vacancy (VS)] film composition allows hole concentration samples to be tuned. It is found that an increased Cu/Zn molar ratio leads a reduced probability formation VS, which increases concentration. An increase in S/Zn ratios significantly Si Clearly, compensation effects limit samples. results show origin p-type conductivity. also shown suitable choice acceptor-like defect Zn1−xCuxSy.
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