Dielectric relaxation and magnetic properties of Ti and Zn co-doped GaFeO 3
作者： Imen Raies , Shara A. Dulmani , Mongi Amami
DOI: 10.1016/J.PHYSB.2018.03.009
关键词:
摘要: Abstract polycrystalline GaFeO3 and Ga0.98Zn0.02Fe0.98Ti0.02O3 were prepared by solid state reaction. They showed an orthorhombic crystal structure with Pc21n space group. The magnetic transition temperature decrease due to the dilution of interaction. A noteworthy effect substitution multiple elements at Ga Fe-sites on dielectric constant tangent loss has been observed. Complete studies (180–400 K) frequency (10–107 Hz) dependence impedance have provided grains grain boundaries conduction mechanism relaxation material. Impedance spectroscopy results in range 160–400 K revealed a distinct process boundaries.
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