System and method for controlling plasma with an adjustable coupling to ground circuit

作者: Wenli Collison , Tuqiang Ni

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摘要: A system and method for controlling plasma. The includes a semiconductor chamber comprising powered electrode, another an adjustable coupling to ground circuit. electrode is configured receive wafer or substrate. There at least one grounded generate electrical connection with the electrode. At of electrodes electrically coupled circuit modify impedance ion energy plasma controlled by

参考文章(28)
David E. Henderson, Ian Harvey, Polymer adhesive plasma confinement ring ,(1997)
Eric H. Lenz, Robert D. Dible, Plasma etching apparatus utilizing plasma confinement ,(1995)
Georges J. Gorin, Plasma reactor apparatus and method ,(1984)
Mukund Srinivasan, Rajinder Dhindsa, Eric Lenz, Lumin Li, Dual frequency plasma processor ,(2001)
Niall MacGearailt, Plasma processor method and apparatus ,(2001)
Butch Berney, Andras Kuthi, Andrew D. Bailey, Arthur M. Howald, Apparatus and methods for minimizing arcing in a plasma processing chamber ,(2003)
Helen H. Zhu, George A. Mueller, Thomas D. Nguyen, Lumin Li, Method for selective plasma etch ,(1998)
Toru Otsubo, Shinji Sasaki, Ichirou Sasaki, Yasumichi Suzuki, Kazuhiro Ohara, Method of and apparatus for removing foreign particles ,(1994)