Plasma etching apparatus utilizing plasma confinement

作者: Eric H. Lenz , Robert D. Dible

DOI:

关键词:

摘要: Plasma etching apparatus includes a stack of quartz rings that are spaced apart to form slots therebetween and positioned surround an interaction space between two electrodes the where plasma is formed during operation apparatus. The dimensions chosen insure charged particles spent gases in exiting neutralized by wall collisions as they exit slots. Two voltage sources different frequencies used apply voltages fashion isolates each source from other.

参考文章(13)
Tadahiro Ohmi, Device for plasma process ,(1990)
Lee Chen, Stanley J. Poloncic, Charles J. Hendricks, Gangadhara S. Mathad, Single wafer plasma etch reactor ,(1984)
Bawa Singh, John Henry Thomas, Triode plasma reactor with phase modulated plasma control ,(1990)
Andreas G. Hegedus, Glenn R. Corn, Variable duty cycle, multiple frequency, plasma reactor ,(1985)
Georges J. Gorin, Plasma reactor apparatus and method ,(1984)
Masaru Umeda, Tadahiro Ohmi, Tadashi Shibata, Reduced pressure surface treatment apparatus ,(1989)
Steven M. Gorbatkin, Chin-Chi Tsai, Lee A. Berry, Plasma generating apparatus for large area plasma processing ,(1989)
Josef T. Hoog, Georges J. Gorin, Plasma reactor apparatus ,(1979)