Active gate driving method for reliability improvement of IGBTs via junction temperature swing reduction
作者： Haoze Luo , Francesco Iannuzzo , Ke Ma , Frede Blaabjerg , Wuhua Li
DOI: 10.1109/PEDG.2016.7527079
关键词:
摘要: This paper introduces an advanced gate driver used as thermal swing control method for the reduction of AC load current-related ΔT j in Insulated-Gate Bipolar Transistors (IGBTs). A switchable resistor network is applied to driver, so that switching power losses can be changed according amplitude current. Accordingly, a closed-loop including functions root-mean-square calculation and phase analysis proposed. Hence reduced by means changing losses-related resistors on basis output fundamental frequency As result, longer device useful life duration achieved. Furthermore, maximum junction temperature under high-temperature operation proposed method. Simulations experiments are provided validate effectiveness active driver.
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