Recombination of Self-Trapped Excitons in Silicon Nanocrystals Grown in Silicon Oxide
作者： K. S. Zhuravlev , A. Yu. Kobitsky
DOI: 10.1134/1.1317584
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摘要: The kinetics of photoluminescence (PL) and steady-state PL from silicon nanocrystals formed in the SiO2 matrix by ion implantation were studied experimentally for first time temperature range liquid-helium to room temperature. A dramatic increase decay time, accompanied intensity quenching, is observed below 70 K. results obtained indicate that nanocrystal arises radiative recombination excitons self-trapped at nanocrystal-SiO2 interface.
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