作者: E.N Vandyshev , K.S Zhuravlev , A.M Gilinsky , W Skorupa
DOI: 10.1016/J.PHYSE.2003.11.032
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摘要: Abstract The effect of electric field generated by the application surface acoustic waves on photoluminescence (PL) silicon nanocrystals embedded in SiO 2 films is studied. It shown that results an increase intensity nanocrystal PL, amounting to 10% at a amplitude 6 kV cm −1 . are discussed within frame self-trapped exciton model.