Resputtering process for eliminating dielectric damage

摘要: Methods of resputtering material from the wafer surface include at least one operation under a pressure 10 mTorr. The methods can be used in conjunction with an iPVD apparatus, such as hollow cathode magnetron (HCM) or planar magnetron. resputtered may diffusion barrier conductive layer material. provide process conditions which minimize damage to dielectric during resputtering. allow considerable etching via bottom, while not damaging exposed elsewhere on wafer. Specifically, they solution for microtrenching problem occurring conventional resputter process. Furthermore, increase etch rate deposition ratio (E/D) and improve back nonuniformity (EBNU) In general, IC devices higher reliability decrease manufacturing costs.