X-ray absorption spectroscopy, simulation and modeling of Si-DLC films
作者： V. Palshin , R. C. Tittsworth , C. G. Fountzoulas , E. I. Meletis
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摘要: Amorphous silicon-containing diamond-like carbon (Si-DLC) films were deposited on silicon wafers by Ar+ Ion Beam Assisted Deposition (IBAD) at various energy conditions. The examined with X-ray Absorption Near Edge Structure (XANES) spectroscopy and Extended Fine (EXAFS) spectroscopy. Si K-edge Spectroscopy (XAS) results indicate that Si-DLC have an amorphous structure, where each atom is coordinated to four atoms or CHn groups. This short-range order, a surrounded C atoms, was found in all films. XANES spectra do not coordination oxygen phenyl rings, which are present the precursor material. A structural model of proposed based XAS findings. Simulated absorption produced FEFF8 show good resemblance experimental data.
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